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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
N2/(In,Ga)As
XPS Formula:
(In,Ga)As
Name:
nitrogen/indium gallium arsenide
CAS Registry No:
106070-25-1
Class:
arsenide, III-V semiconductor, nitride, non-stoichiometric oxide

Citation:
Author Name(s):
Thomas III J.H., Kaganowicz G., Robinson J.W.
Journal:
J. Electrochem. Soc. 135, 1201
DOI:
Pub Year:
1988

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d5/2
Binding Energy (eV)
444.20
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
3E6 L N2/InGaAs. The sample was exposed to N2 plasma for 1 min. The conditions during the exposure were as follows: 50 mTorr pressure, 400 W at 13.56 mHz excitation and 300 K.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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