NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Sb/InP

Sb/InP

antimony/indium phosphide

CAS Registry No:

22398-80-7

Class:

III-V semiconductor, phosphide

Citation:

Author Name(s):

Kendelewicz T., Miyano K., Cao R., Woicik J.C., Lindau I. and Speicer W.E.

Journal:

Surf. Sci. 220, L726

DOI:

Pub Year:

1989

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4d

Surface Core-Level Shift (eV)

0.30

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1 ML Sb/InP(110). Sb was deposited onto vacuum-cleaved n-InP(110) surface.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300