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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Sn
Formula:
Sn/Si
XPS Formula:
Sn*/Si
Name:
tin/silicon
CAS Registry No:
7440-21-3
Class:
element, IV-VI semiconductor

Citation:
Author Name(s):
Rich D.H., Miller T., Samsavar A., Lin H.F., Chiang T.-C.
Journal:
Phys. Rev. B 37, 10221
DOI:
Pub Year:
1988

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-4d
Double Separation (eV)
0.11
Energy Uncertainty:
0.001
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.61
Lorentzian Width (eV):
0.063

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
80
Overall Energy Resolution (eV):
0.3
Calibration:
FL
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.075-1.2 ML Sn/n-type Si(100). The Sn overlayers were prepared by electron beam evaporation. Substrate temperature was 423-473K. The deposited surface were annealed at 823 K for 2 min. and allowed to cool to 373-423K before measurements. Branching ratio is 0.74.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
373
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