NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Sb

GaSb

GaSb*

gallium stibnide

CAS Registry No:

12064-03-8

II-VI semiconductor, III-V semiconductor, stibnide

Citation:

Author Name(s):

Franklin G.E., Rich D.H., Samsavar A., Hirchchorn E.S., Leibsle F.M.,Miller T., et al.

Phys. Rev. B 41, 12619

Pub Year:

1990

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

4d_5/2

Binding Energy (eV)

31.94

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

1.0575

Lorentzian Width (eV):

0.24

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.2

Calibration:

FL

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙