NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaP

gallium phosphide

12063-98-8

chalcogenide, II-VI semiconductor, III-V semiconductor, phosphide

Citation:

Author Name(s):

Duo L., Sancrotti M., Cosso R., Addato S.D., Ruocco A., Nannarone S., et al.

Journal:

Phys. Rev. B 42, 3478

DOI:

Pub Year:

1990

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV)

0.38

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.42

Lorentzian Width (eV):

0.17

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.42

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Lightly doped n-type GaP(110).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300