NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

Yb/GaP

Name:

ytterbium/gallium phosphide

CAS Registry No:

7440-64-4

Class:

III-V semiconductor, lanthanide, phosphide, rare earth

Citation:

Author Name(s):

Duo L., Sancrotti M., Cosso R., Addato S.D., Ruocco A., Nannarone S., et al.

Journal:

Phys. Rev. B 42, 3478

DOI:

Pub Year:

1990

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-4f

Surface Core-Level Shift (eV)

0.79

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.42

Calibration:

Charge Reference:

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

2 ML were deposited onto lightly doped n-type GaP(110). Evaporation rates of Yb were monitored with a quartz microbalance.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300