NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Gd
Gd/Si
gadolinium (Casno:7440-54-2)/silicon
7440-54-2
element, IV semiconductor
Citation:
Henle W.A., Netzer F.P., Cimino R., Braun W.
Surf. Sci. 221, 131
Pub Year:
1989
Data Processing:
Doublet Separation for Photoelectron Lines
DS-5p
mixed Gaussian/Lorentzian
0.34
Measurement:
Anode Material:
other source
X-ray Energy:
42
Overall Energy Resolution (eV):
0.2
Calibration:
Charge Reference:
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.8 nm Gd/Si(111)7x7, n-type. Gd coverages were measured with quartz film thickness monitor.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300