NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

SiOx/Si

XPS Formula:

Si atoms in substrate

Name:

silicon oxides/silicon

CAS Registry No:

11126-22-0

Class:

anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Aarnik W.A.M., Weishaupt A., van Silfout A.

Journal:

Appl. Surf. Sci. 45, 37

DOI:

Pub Year:

1990

book All Records in this Publication

Data Processing:

Photoelectron Line

99.40

Background Subtraction Method:

Shirley

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Cu2p3 = 932.67, Cu L3MM = 334.95

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Native silicon oxide. The oxide thickness is 27+- 1 A.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300