NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

SiO₁.₉

Name:

silicon oxide (SiO1.9)

CAS Registry No:

Class:

IV semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Chao S.S., Takagi Y., Lukovsky G., Pai P., Caster R.C.,Tyler J.T., et al.

Journal:

Appl. Surf. Sci. 26, 575

DOI:

Pub Year:

1986

book All Records in this Publication

Data Processing:

Photoelectron Line

103.40

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

2.3

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Ar=241.8

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Thin films of SiOx have been grown by low temperature (623 K) plasma enchanced chemical vapour deposition.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300