Tab Page Summary
IV semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide
Chao S.S., Takagi Y., Lukovsky G., Pai P., Caster R.C.,Tyler J.T., et al.
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Total Records: 7
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Ar=241.8
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Thin films of SiOx have been grown by low temperature (623 K) plasma enchanced chemical vapour deposition.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300