NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 4

Data Processing:

Photoelectron Line

99.30

0.1

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

Al, Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The SiO2 film (thickness is 13.5 A) was grown on a Si wafer in rapid thermal processor. The oxidation temperature was 973 K and the reaction time was 30 s.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300