Tab Page Summary
Si atoms in disordered solid solution of Si in Ti
titanium/molybdenum disilicide
IV semiconductor, silicide, solid solution
Sullivan J.P., Hirano T., Komeda T., Meyer III H.M., Trafas B.M., Waddill G.D et al.
Appl. Phys. Lett. 56, 671
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Surface Core-level Shift for the Second Layer of Atoms
Anode Material:
other source
Overall Energy Resolution (eV):
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
21 A Ti/MoSi2(001)-(1x1). Excitation energy was 35 - 135 eV. The energy is referenced to the bulk state of the Si2p line. The deposition rate was measured with quartz crystal oscillator.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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