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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
P
Formula:
InP
Name:
indium phosphide
CAS Registry No:
22398-80-7
Class:
II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Trafas B.M., Aldao C.M., Capasso C., Shapira Y., Boscherini F., Vitomirov I.M.
Journal:
Phys. Rev. B 40, 9811
DOI:
Pub Year:
1989

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-2p
Surface Core-Level Shift (eV)
-1.00
Energy Uncertainty:
0.03
Background Subtraction Method:
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
170
Overall Energy Resolution (eV):
0.4
Calibration:
Charge Reference:
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Sn-doped InP(11O).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
293
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