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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
O2/GaAs
XPS Formula:
Ga*2O3
Name:
oxygen/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Cuberes M.T., Sacedon J.L.
Journal:
Appl. Phys. Lett. 57, 2794
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p3/2
Chemical Shift (eV)
3.20
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
3.2E4 L O2/GaAs(100)-(4x1). The sample was exposed to oxygen with a simultaneous electron bombardment at 150 eV and 0.6 mA/cm2 current density. The energy shift is referenced to the binding energy of As in GaAs(100)-(4x1).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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