There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Bi1.1Ge28.0Se70.9
XPS Formula:
Bi1.1Ge*28.0Se70.9
Name:
bismuth germanium selenium alloy (1.1-28.0-70.9)
CAS Registry No:
Class:
alloy, chalcogenide, glass, IV-VI semiconductor

Citation:
Author Name(s):
Mytilineou E., Kounavis P., Chao B.S.
Journal:
J. Phys. Cond. Matter 1, 4687
DOI:
Pub Year:
1989

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
31.00
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Gold
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Thin films of amorphous chalcogenite alloys were prepared by sputtering in Ar atmosphere. X-ray energy-dispersive spectrometry was utilized to determine the film compositions.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Energy Dispersive Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
An error has occurred. This application may no longer respond until reloaded. Reload 🗙