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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
InP
XPS Formula:
In*P
Name:
indium phosphide
CAS Registry No:
22398-80-7
Class:
II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Salmagne S.R., Baier H.-U., Monch W.
Journal:
J. Vac. Sci. Technol. B 8, 843
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-4d5/2
Surface Core-Level Shift (eV)
0.29
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
0.43
Gaussian Width (eV):
0.9388
Lorentzian Width (eV):
0.39

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
Overall Energy Resolution (eV):
0
Calibration:
FL
Charge Reference:
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
InP(110). Branching ratio is 0.67

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
293
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