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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Hf
Formula:
HfN0.19
XPS Formula:
Hf*N0.19
Name:
hafnium nitride (HfN0.19)
CAS Registry No:
Class:
nitride

Citation:
Author Name(s):
Baba Y., Sasaki T.A., Takano I.
Journal:
J. Vac. Sci. Technol. A 6, 2945
DOI:
Pub Year:
1988

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
4f7/2
Binding Energy (eV)
15.30
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The nitrogenation was carried out by bombarding the metal with 8-keV Ar+ ions in nitrogen at 1.0E-3 Pa. The approximate thickness of the TiN films obtained under these conditions was ~7 nm which is complete with to the range of the Ar+ions.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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