There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Ge/Si
XPS Formula:
Ge/Si*
Name:
germanium/silicon(CasNo:7440-21-3)
CAS Registry No:
7440-21-3
Class:
element, IV-VI semiconductor

Citation:
Author Name(s):
Miller T., Hsieh T.C., Chiang T.-C.
Journal:
Phys. Rev. B 33, 6983
DOI:
Pub Year:
1986

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV)
0.61
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.940
Lorentzian Width (eV):
0.182

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
0.4
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
6 ML Ge/n-type Si(111)-(7x7). The thickness was determined by quartz-crystal thickness monitor. Braching ratio of the bulk and the surface component are 0.509 and 0.529, respectively. Surface shift = -0.365. Surface core-level shift derived from analysis of spectra for photon energies of 108 eV and 130 eV

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙