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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Se
Formula:
Cu29.1In22.4Se48.5/SiO2
Name:
copper indium selenium ss/silicon dioxide(Cu29.1In22.4Se48.5/SiO2)
CAS Registry No:
Class:
chalcogenide, IV semiconductor, solid solution

Citation:
Author Name(s):
Kohiki S., Nishitani M., Negami T., Wada T.
Journal:
Phys. Rev. B 45, 9163
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
54.50
Energy Uncertainty:
0.1
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Ag = 84.00,368.27
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
p-type CuInSe film with a conductivity of 1.2 ohm-1 cm-1 was deposited onto quartz substrate at substrate temperatures ranging from 670 K to 770 K. Chalcopyrite structure. The composition was determined by EPMA and inductively coupled plasma-optical-emiss

Specimen:
Specimen:
Method of Determining Specimen Composition:
Electron-Probe Microanalysis
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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