NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Ge
Ge
germanium
7440-56-4
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor
Citation:
Le Lay G., Kanski J., Nilsson P.O., Karlsson U.O.
Appl. Surf. Sci. 56, 178
Pub Year:
1992
Data Processing:
Doublet Separation for Photoelectron Lines
DS-3d
mixed Gaussian/Lorentzian
Measurement:
Anode Material:
other source
X-ray Energy:
75
Overall Energy Resolution (eV):
0.30
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped Ge(100)c(2x1). The sample was cleaned by Ar+ ion bombardment at 773 K and subsequently annealed (T = 973 K). Emission angle = 60 degrees.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300