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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
N2/Rb/GaAs
XPS Formula:
gallium atoms in GaN1+x
Name:
nitrogen/rubidium/gallium arsenide
CAS Registry No:
Class:
arsenide, III-V semiconductor, nitride

Citation:
Author Name(s):
Soukiassian P., Starnberg H.I., Kendelewicz T.
Journal:
Appl. Surf. Sci. 56, 772
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d
Chemical Shift (eV)
2.30
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
90
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
4E4 L N2/1.8 ML Rb/GaAs(110). The energy is referenced to the bulk state of the Ga3d line.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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