NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

Tb/Si

terbium/silicon

CAS Registry No:

7440-21-3

element, IV semiconductor, lanthanide, rare earth

Citation:

Author Name(s):

Kennou S., Veuillen J.-Y., Tan T.A.N.

Appl. Surf. Sci. 56, 520

Pub Year:

1992

book All Records in this Publication

Data Processing:

Chemical Shift

Line Designation:

CS-2p

Chemical Shift (eV)

-1.15

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

other anode

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

12 A Tb/n-type Si(111)-(7x7) with a resistivity of 1.8 - 3.2 ohm cm. The thickness was measured using a quartz-crystal thickness monitor. The substrate surface was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K) by electron bombardment

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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