NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

4f_7/2

21.70

TaOx

4f_7/2

27.00

TaOx

530.90

Ta₂O₅

4f_7/2

27.00

Ta₂O₅

530.80

TaSi₂

4f_7/2

22.30

TaSi₂

2p_3/2

99.50

TaSi₂Ox

4f_7/2

27.50

TaSi₂Ox

531.10

TaSi₂Ox

2p_3/2

103.60

Data Processing:

Photoelectron Line

2p_3/2

99.50

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu=84.00,932.67, Pd3d5=335.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with three-point correction of energy scale

Comment:

Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm.

Specimen:

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300