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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Cd
Formula:
CdTe
XPS Formula:
Cd*Te surface shift
Name:
cadmium telluride
CAS Registry No:
1306-25-8
Class:
chalcogenide, II-VI semiconductor, IV-VI semiconductor, telluride

Citation:
Author Name(s):
John P., Leibsle F.M., Miller T., Hsieh T.C., Chiang T.-C.
Journal:
Superlattices and Microstructures 3, 347
Pub Year:
1987

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-4d5/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
0.60
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.39
Lorentzian Width (eV):
0.23

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
52
Overall Energy Resolution (eV):
0.3
Calibration:
FL
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type CdTe(100)-(2x1),in-doped with resistivity of 2E8 Ohm cm. MBE generate surfure was obtained by growing CdTe on a clean sputter/anneal 2x1 surfure with substrate at 523 K. Energy is referenced to the bulk state of Cd4d5/3 line. Branching ratio is 0.59.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
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