Reliable (reported energy within 300 eV of a reference energy)
Comment:
10 L Sb/n-type CdTe(100)-(2x1),in-doped with resistivity of 2E8 Ohm cm. MBE generated surfaces were obtained by growing As on the clean sputter/anneal 2x1 surface with substrate at 573 K and were annealed at 548 K. Branching ratio is 0.72.