NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 4

Data Processing:

Photoelectron Line

3d_5/2

334.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Other, Si2p = 99.34

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

0.2 nm Pd/2 nm SiOx/ p-type B-doped Si(111) with a resistivity of 6 ohm cm. Pd was deposited at 100 K. The chemically clean SiOx surface wasprepared by heating the sample (T = 850 K, time = 2min). The thicknesses were measured using a quartz-crystal thick

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

100