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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
O
Formula:
TaSi2Ox
XPS Formula:
TaSi2O*x
Name:
tantalum silicon oxides
CAS Registry No:
Class:
IV-VI semiconductor, non-stoichiometric oxide

Citation:
Author Name(s):
Thomas III J.H., Hammer L.H.
Journal:
J. Electrochem. Soc. 136, 2004
DOI:
Pub Year:
1989

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
531.10
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu=84.00,932.67, Pd3d5=335.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with three-point correction of energy scale
Comment:
Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm. The stoichiometry of the tantalum silicide was determined by RBS.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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