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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
O2/GaAs
Name:
oxygen/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Kroll G.H., Ohno T.R., Weaver J.H.
Journal:
Appl. Phys. Lett. 58, 2249
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3p3/2
Chemical Shift (eV)
2.80
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
20 L O2/n-type Si-doped GaAs(110) with a carrier concentration of 6E17 cm-3. The energy is referenced to the bulk state of the As3p3/2 line. Emission angle = 69 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
20
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