Tab Page Summary
Slaughter J.M., Shapiro A., Kearney P.A., Falco C.M.
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
15 A Mo/Si. The wafer was heated to 1123 K and then a 100-A-thick buffer layer of homoepitaxial Si was grown at 1073 K.
Method of Determining Specimen Composition:
Rutherford Backscattering Spectrometry
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300