Tab Page Summary
III-V semiconductor, stibnide
Waldrop J.R., Sullivan G.J., Grant R.W., Kraut E.A., Harrison W.A.
J. Vac. Sci. Technol. B 10, 1773
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The epitaxial layers were grown on bulk GaSb(001) substrates at 773 K.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300