Tab Page Summary
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor
Yang X., Cao R., Terry J., Pianetta P.
J. Vac. Sci. Technol. B 10, 2013
Doublet Separation for Photoelectron Lines
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.25
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The clean Ge(100) surface was prepared by a 1073 K anneal. Peak locations: Voigt function. Branching ratio = 0.67.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300