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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
In0.75Ga0.25As/InP
Name:
gallium indium arsenide ss/indium phosphide(In0.75Ga0.25As/InP)
CAS Registry No:
Class:
arsenide, III-V semiconductor, solid solution

Citation:
Author Name(s):
Erickson J.W., Theis W.M., Cole T., Green A.K., Rehn V.
Journal:
Surf. Sci. 274, 363
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-3d5/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
0.30
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.44
Lorentzian Width (eV):
0.21

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
100
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
80 A InGaAs/InP(100)-(4x2). Coherently strained film was grown at 850 - 860 K. The sample was decapped by heating to about 650 K. The Gaussian width is an intrinsic one. The intensity ratio of the surface/bulk components was 0.41. Branching ratio = 0.67.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
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