Tab Page Summary
element, II-VI semiconductor, IV semiconductor
Weijs P.J.W., van Acker J.F., Fuggle J.C., van der Heide P.A.M., Haak H., and Horn K.
10.1016/0039-6028(92)90023-Y
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Anode Material:
other source
Overall Energy Resolution (eV):
0.5
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type As-doped Si(100)-(2x1) was cleaned by etching in a 1% HF in water solution, followed by mild Ar+ ion bombardment and annealing by direct current flow through the sample.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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