NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SnS₂

tin disulfide

1315-01-1

chalcogenide, II-VI semiconductor, IV-VI semiconductor, sulfide

Citation:

Author Name(s):

Schellenberger A., Schlaf R., Mayer T., Holub-Krappe E., Pettenkofer C., et al.

Journal:

Surf. Sci. 241, L25

DOI:

Pub Year:

1991

book All Records in this Publication

Data Processing:

Photoelectron Line

4d_5/2

26.00

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

0.3

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.3

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type P-doped SnS2(0001) with a carrier concentration of 1E15 cm-3. The crystals were synthesized from melts.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300