Reliable (reported energy within 300 eV of a reference energy)
Comment:
17 A SiO2/n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3. The oxide was formed by heating the wafer to 1000 K in 7E4Pa of O2 for 15 min. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K