Reliable (reported energy within 300 eV of a reference energy)
Comment:
2 - 6 ML Ba/Si(100). p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by Ar+ ion bombardment (Ep = 2 keV, j = 15 microamperes cm-2, time = 30 min) and subsequently annealed (T = 1123 K, time = 30 min). The overlayer thickness was deter