NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

GaAs₀.₈₇

gallium arsenide(GaAs0.87)

CAS Registry No:

arsenide, III-V semiconductor

Citation:

Author Name(s):

DeLouise L.A.

J. Appl. Phys. 70, 1718

Pub Year:

1991

bookAll Records in this Publication

Data Processing:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3p

Double Separation (eV)

3.37

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The GaAs(110) wafer was initially degreased and wet etched in H2SO4:H2O2:H2O (5:1:1). The surface oxide was removed in situ by annealing (T = ~ 825 K, time > 20 min). Emission angle = 50 degrees.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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