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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAs0.68
Name:
gallium arsenide(GaAs0.68)
CAS Registry No:
Class:
arsenide, III-V semiconductor

Citation:
Author Name(s):
DeLouise L.A.
Journal:
J. Appl. Phys. 70, 1718
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d5/2
Binding Energy (eV)
40.70
Energy Uncertainty:
Background Subtraction Method:
Linear
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
1.51
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The GaAs(110) wafer was initially degreased and wet etched in H2SO4:H2O2:H2O (5:1:1). The surface oxide was removed in situ by Ar+ ion bombardment (Ep = 3 keV, j = 1E15 ions/cm2) and annealing. Emission angle = 50 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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