NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 14

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

Si/O₂

CS-2p

3.50

O₂/Y/Si

CS-2p

3.70

O₂/Y/Si

150.20

Si/Y

150.20

Y/Si

3d_5/2

156.50

Y/Si

3d_5/2

154.30

O₂/Y/Si

3d_5/2

158.40

Y/Si

3d_5/2

156.20

150.50

99.40

Si/Y

150.30

Si/Y

99.20

Si/Y

150.00

Si/Y

98.90

Data Processing:

Photoelectron Line

99.20

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.8 ML Y/Si(100), p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by cycles of Ar+ ion bombardment (Ep = 1 keV, j = 5 microamperes cm-2, time = 30 min) and annealing (T = 1123 K, time = 5 min) by indirect electron bombardment.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300