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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
O2/Y/Si
Name:
oxygen/yttrium/silicon
CAS Registry No:
Class:
IV semiconductor, non-stoichiometric oxide, oxide, rare earth

Citation:
Author Name(s):
Mesarwi A., Ignatiev A.
Journal:
Surf. Sci. 244, 15
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p
Chemical Shift (eV)
3.70
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E5 L O2/0.6 ML, 1 ML, 2.5 ML, and 5.2 ML Y/Si(100), p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by cycles of Ar+ ion bombardment (Ep = 1 keV, j = 5 microamperes cm-2, time = 30 min) and annealing (T = 1123 K, time = 5 min) by in

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
773
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