Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E4 L, 5E4 L and 1E5L O2/1 ML Y/Si(100), p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by cycles of Ar+ ion bombardment (Ep = 1 keV, j = 5 microamperes cm-2, time = 30 min) and annealing (T = 1123 K, time = 5 min) by indirect electr