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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
GaAsOx/GaAs
XPS Formula:
Ga2O3
Name:
gallium arsenide oxides/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Cuberes M.T., Sacedon J.L.
Journal:
Surf. Sci. 251, 92
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d
Chemical Shift (eV)
0.90
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5.2 A GaAsOx was grown by electron stimulated oxidation on Si-doped GaAs(100). The energy is referenced to the bulk state of the Ga3d line. The thickness was determined by XPS.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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