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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si/Ir
XPS Formula:
silicon bulk state
Name:
silicon/iridium
CAS Registry No:
7440-21-3
Class:
element, silicide

Citation:
Author Name(s):
Morgan S.J., Williams R.H., Mooney J.M.
Journal:
Appl. Surf. Sci. 56, 493
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
99.07
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.7
Calibration:
Pt4f7 = 71.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
7 A Ir/p-type Si(100)-(2x1) with a resistivity of 3 ohm cm. The substrate was cleaned by annealing (T =1023 K, time = 20 min). The thickness was measured using a quartz-crystal thickness monitor. Peak locations: Voigt function.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
623, 823
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