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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
C
Formula:
SiC
Name:
silicon carbide
CAS Registry No:
409-21-2
Class:
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:
Author Name(s):
Contarini S., Howlett S.P., Rizzo C., De Angelis B.A.
Journal:
Appl. Surf. Sci. 51, 177
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
282.60
Energy Uncertainty:
0.2
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The powder was deposited in a flat cup-shaped sample holder.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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