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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
N
Formula:
Ta0.4N0.5
Name:
tantalum nitride
CAS Registry No:
Class:
nitride

Citation:
Author Name(s):
Badrinarayanan S., Sinha S.
Journal:
J. Appl. Phys. 69, 1141
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
396.70
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Ag,Cu = 84.00,368.27,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:
FAT mode. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 823 K). The N2+ ions were implanted at 8 keV ( j = 20 microamperes/cm2 , time = 20 min). The number of implanted atoms was ~2.4E17 ions/cm2.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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