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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
Cl2/GaAs0.96
Name:
chlorine/gallium arsenide(Cl2/GaAs0.96)
CAS Registry No:
Class:
arsenide, element, III-V semiconductor

Citation:
Author Name(s):
DeLouise L.A.
Journal:
J. Appl. Phys. 70, 1718
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-3d
Double Separation (eV)
0.51
Energy Uncertainty:
Background Subtraction Method:
Linear
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.45 ML Cl2/GaAs0.96(110). The Cl2 molecular beam with Ep = 0.14 eV was directed toward the surface at an incident angle of 60 degrees. The GaAs(110) wafer was initially degreased and wet etched in H2SO4:H2O2:H2O (5:1:1). Emission angle = 50 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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