Tab Page Summary
gallium arsenide oxides/gallium arsenide
arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide
Lu Z., Schmidt M.T., Osgood R.M., Jr, Holber W.H., Podlesnik D.V.
J. Vac. Sci. Technol. A 9, 1040
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Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10 A GaAsOx/n-type GaAs(100). The oxide was formed by O2 exposure (p = 100 Torr, T = 773 K, time = 1000 s). The energy is referenced to the bulk state of the As2p3/2 line.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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