There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
In0.75Ga0.25As/InP
XPS Formula:
In0.75Ga0.25As bulk state
Name:
gallium indium arsenide ss/indium phosphide(In0.75Ga0.25As/InP)
CAS Registry No:
Class:
arsenide, III-V semiconductor, solid solution

Citation:
Author Name(s):
Erickson J.W., Theis W.M., Cole T., Green A.K., Rehn V.
Journal:
Surf. Sci. 274, 363
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d5/2
Binding Energy (eV)
40.75
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.35
Lorentzian Width (eV):
0.21

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
100
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
80 A InGaAs/InP(100)-(4x2). Coherently strained film was grown at 850 - 860 K. The sample was decapped by heating to about 650 K. The Gaussian width is an intrinsic one. The spectra were recorded at normal emission. Branching ratio = 0.67.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙