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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
N
Formula:
HN3/Si
XPS Formula:
H-N=N=&N*/Si
Name:
hydrogen azide/silicon
CAS Registry No:
7782-79-8
Class:
azide

Citation:
Author Name(s):
Chu J.C.S., Bu Y., Lin M.C.
Journal:
Surf. Sci. 284, 281
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
399.50
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Si2p = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
2.0 +- 0.5 L HN3/B-doped Si(111)-(7x7) with a resistivity of 10 ohm cm. The substrate was annealed at temperature more than 1500 K. The curve fitting was based on equal FWHMs and intensities of the nitrogen states (H-N*=N=&N and H-N=N=&N*).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
120
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