NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

GaAs

gallium(III) arsenide

CAS Registry No:

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Mesarwi A., Ignatiev A.

Surf. Sci. 282, 371

Pub Year:

1993

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

3d

Binding Energy (eV)

19.00

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Si-doped GaAs(100) with a carrier concentration of 1E16 cm-3. The surface was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect electron bombardment. This was repeated several times.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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